FDC655BN mosfet equivalent, powertrench mosfet.
* 6.3 A, 30 V. RDS(ON) = 25 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 4.5 V
* Fast switching
* Low gate charge
* High performance trench technology for extr.
where low in-line power loss and fast switching are required.
D D
S
55
TM
B
G D
1 2 3
6 5 4
SuperSOT-6
D
Absolu.
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain superior switching performance. These devices are well suit.
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